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Commit 00918429 authored by Brian Norris's avatar Brian Norris Committed by David Woodhouse
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mtd: nand: erase block before marking bad 



Many NAND flash systems (especially those with MLC NAND) cannot be
reliably written twice in a row. For instance, when marking a bad block,
the block may already have data written to it, and so we should attempt
to erase the block before writing a bad block marker to its OOB region.

We can ignore erase failures, since the block may be bad such that it
cannot be erased properly; we still attempt to write zeros to its spare
area.

Signed-off-by: default avatarBrian Norris <computersforpeace@gmail.com>
Signed-off-by: default avatarArtem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: default avatarDavid Woodhouse <David.Woodhouse@intel.com>
parent 152b8616

drivers/mtd/nand/nand_base.c

+11 −0
Original line number Diff line number Diff line
@@ -394,6 +394,17 @@ static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs) 
	uint8_t buf[2] = { 0, 0 };

	int block, ret, i = 0;



	if (!(chip->bbt_options & NAND_BBT_USE_FLASH)) {

		struct erase_info einfo;



		/* Attempt erase before marking OOB */

		memset(&einfo, 0, sizeof(einfo));

		einfo.mtd = mtd;

		einfo.addr = ofs;

		einfo.len = 1 << chip->phys_erase_shift;

		nand_erase_nand(mtd, &einfo, 0);

	}



	if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)

		ofs += mtd->erasesize - mtd->writesize;