Merge "power: qpnp-charger: update VBAT_WEAK register in qpnp charger probe" (0f2de219) · Commits · e / devices / samsung / android_kernel_samsung_msm8916

Documentation/devicetree/bindings/power/qpnp-charger.txt

+4 −0

Original line number	Diff line number	Diff line
		@@ -37,6 +37,9 @@ Parent node optional properties:
		- qcom,maxinput-usb-ma: Maximum input current USB.
		- qcom,maxinput-dc-ma: Maximum input current DC.
		- qcom,vbatdet-delta-mv: Battery charging resume delta.
		- qcom,vbatweak-mv: Weak battery voltage threshold in mV, above which
		fast charging can start. The supported voltage range is
		from 2100mV to 3600mV with a step size of 100mV.
		- qcom,charging-disabled: Set this property to disable charging
		by default. This can then be overriden
		writing the the module parameter
		@@ -203,6 +206,7 @@ Example:
		qcom,ibatmax-ma = <1500>;
		qcom,ibatterm-ma = <200>;
		qcom,ibatsafe-ma = <1500>;
		qcom,vbatweak-mv = <3200>;
		qcom,thermal-mitigation = <1500 700 600 325>;
		qcom,cool-bat-degc = <10>;
		qcom,cool-bat-mv = <4100>;

drivers/power/qpnp-charger.c

+25 −0

Original line number	Diff line number	Diff line
		@@ -246,6 +246,7 @@ struct qpnp_chg_regulator {
		* @btc_disabled Flag to disable btc (disables hot and cold irqs)
		* @max_voltage_mv: the max volts the batt should be charged up to
		* @min_voltage_mv: min battery voltage before turning the FET on
		* @batt_weak_voltage_mv: Weak battery voltage threshold
		* @max_bat_chg_current: maximum battery charge current in mA
		* @warm_bat_chg_ma: warm battery maximum charge current in mA
		* @cool_bat_chg_ma: cool battery maximum charge current in mA
		@@ -318,6 +319,7 @@ struct qpnp_chg_chip {
		unsigned int safe_voltage_mv;
		unsigned int max_voltage_mv;
		unsigned int min_voltage_mv;
		unsigned int batt_weak_voltage_mv;
		int prev_usb_max_ma;
		int set_vddmax_mv;
		int delta_vddmax_mv;
		@@ -909,6 +911,26 @@ qpnp_chg_vinmin_get(struct qpnp_chg_chip *chip)
		return vin_min_mv;
		}

		#define QPNP_CHG_VBATWEAK_MIN_MV 2100
		#define QPNP_CHG_VBATWEAK_MAX_MV 3600
		#define QPNP_CHG_VBATWEAK_STEP_MV 100
		static int
		qpnp_chg_vbatweak_set(struct qpnp_chg_chip *chip, int vbatweak_mv)
		{
		u8 temp;

		if (vbatweak_mv < QPNP_CHG_VBATWEAK_MIN_MV
		\|\| vbatweak_mv > QPNP_CHG_VBATWEAK_MAX_MV)
		return -EINVAL;

		temp = (vbatweak_mv - QPNP_CHG_VBATWEAK_MIN_MV)
		/ QPNP_CHG_VBATWEAK_STEP_MV;

		pr_debug("voltage=%d setting %02x\n", vbatweak_mv, temp);
		return qpnp_chg_write(chip, &temp,
		chip->chgr_base + CHGR_VBAT_WEAK, 1);
		}

		static int
		qpnp_chg_usb_iusbmax_get(struct qpnp_chg_chip *chip)
		{
		@@ -3714,6 +3736,8 @@ qpnp_chg_hwinit(struct qpnp_chg_chip *chip, u8 subtype,
		case SMBB_CHGR_SUBTYPE:
		case SMBBP_CHGR_SUBTYPE:
		case SMBCL_CHGR_SUBTYPE:
		qpnp_chg_vbatweak_set(chip, chip->batt_weak_voltage_mv);

		rc = qpnp_chg_vinmin_set(chip, chip->min_voltage_mv);
		if (rc) {
		pr_debug("failed setting min_voltage rc=%d\n", rc);
		@@ -4045,6 +4069,7 @@ qpnp_charger_read_dt_props(struct qpnp_chg_chip *chip)
		OF_PROP_READ(chip, hot_batt_p, "batt-hot-percentage", rc, 1);
		OF_PROP_READ(chip, cold_batt_p, "batt-cold-percentage", rc, 1);
		OF_PROP_READ(chip, soc_resume_limit, "resume-soc", rc, 1);
		OF_PROP_READ(chip, batt_weak_voltage_mv, "vbatweak-mv", rc, 1);

		if (rc)
		return rc;