Merge branch 'fixes-v3.2-rc2' into fixes (52f3a41e) · Commits · e / devices / samsung / android_kernel_samsung_exynos7420

.mailmap

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Original line number	Original line	Diff line number	Diff line
	@@ -68,6 +68,7 @@ Juha Yrjola <juha.yrjola@solidboot.com>
	Kay Sievers <kay.sievers@vrfy.org>		Kay Sievers <kay.sievers@vrfy.org>
	Kenneth W Chen <kenneth.w.chen@intel.com>		Kenneth W Chen <kenneth.w.chen@intel.com>
	Koushik <raghavendra.koushik@neterion.com>		Koushik <raghavendra.koushik@neterion.com>
			Kuninori Morimoto <kuninori.morimoto.gx@renesas.com>
	Leonid I Ananiev <leonid.i.ananiev@intel.com>		Leonid I Ananiev <leonid.i.ananiev@intel.com>
	Linas Vepstas <linas@austin.ibm.com>		Linas Vepstas <linas@austin.ibm.com>
	Mark Brown <broonie@sirena.org.uk>		Mark Brown <broonie@sirena.org.uk>
	@@ -111,3 +112,4 @@ Uwe Kleine-König <ukl@pengutronix.de>
	Uwe Kleine-König <Uwe.Kleine-Koenig@digi.com>		Uwe Kleine-König <Uwe.Kleine-Koenig@digi.com>
	Valdis Kletnieks <Valdis.Kletnieks@vt.edu>		Valdis Kletnieks <Valdis.Kletnieks@vt.edu>
	Takashi YOSHII <takashi.yoshii.zj@renesas.com>		Takashi YOSHII <takashi.yoshii.zj@renesas.com>
			Yusuke Goda <goda.yusuke@renesas.com>

Documentation/ABI/stable/sysfs-acpi-pmprofile

0 → 100644

+22 −0

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			What: /sys/firmware/acpi/pm_profile
			Date: 03-Nov-2011
			KernelVersion: v3.2
			Contact: linux-acpi@vger.kernel.org
			Description: The ACPI pm_profile sysfs interface exports the platform
			power management (and performance) requirement expectations
			as provided by BIOS. The integer value is directly passed as
			retrieved from the FADT ACPI table.
			Values: For possible values see ACPI specification:
			5.2.9 Fixed ACPI Description Table (FADT)
			Field: Preferred_PM_Profile

			Currently these values are defined by spec:
			0 Unspecified
			1 Desktop
			2 Mobile
			3 Workstation
			4 Enterprise Server
			5 SOHO Server
			6 Appliance PC
			7 Performance Server
			>7 Reserved

Documentation/DocBook/drm.tmpl

+168 −140

File changed.

Preview size limit exceeded, changes collapsed.

Documentation/DocBook/mtdnand.tmpl

+1 −18

Original line number	Original line	Diff line number	Diff line
	@@ -572,7 +572,7 @@ static void board_select_chip (struct mtd_info *mtd, int chip)
	</para>		</para>
	<para>		<para>
	The simplest way to activate the FLASH based bad block table support		The simplest way to activate the FLASH based bad block table support
	is to set the option NAND_USE_FLASH_BBT in the option field of		is to set the option NAND_BBT_USE_FLASH in the bbt_option field of
	the nand chip structure before calling nand_scan(). For AG-AND		the nand chip structure before calling nand_scan(). For AG-AND
	chips is this done by default.		chips is this done by default.
	This activates the default FLASH based bad block table functionality		This activates the default FLASH based bad block table functionality
	@@ -773,20 +773,6 @@ struct nand_oobinfo {
	done according to the default builtin scheme.		done according to the default builtin scheme.
	</para>		</para>
	</sect2>		</sect2>
	<sect2 id="User_space_placement_selection">
	<title>User space placement selection</title>
	<para>
	All non ecc functions like mtd->read and mtd->write use an internal
	structure, which can be set by an ioctl. This structure is preset
	to the autoplacement default.
	<programlisting>
	ioctl (fd, MEMSETOOBSEL, oobsel);
	</programlisting>
	oobsel is a pointer to a user supplied structure of type
	nand_oobconfig. The contents of this structure must match the
	criteria of the filesystem, which will be used. See an example in utils/nandwrite.c.
	</para>
	</sect2>
	</sect1>		</sect1>
	<sect1 id="Spare_area_autoplacement_default">		<sect1 id="Spare_area_autoplacement_default">
	<title>Spare area autoplacement default schemes</title>		<title>Spare area autoplacement default schemes</title>
	@@ -1158,9 +1144,6 @@ in this page</entry>
	These constants are defined in nand.h. They are ored together to describe		These constants are defined in nand.h. They are ored together to describe
	the functionality.		the functionality.
	<programlisting>		<programlisting>
	/* Use a flash based bad block table. This option is parsed by the
	* default bad block table function (nand_default_bbt). */
	#define NAND_USE_FLASH_BBT 0x00010000
	/* The hw ecc generator provides a syndrome instead a ecc value on read		/* The hw ecc generator provides a syndrome instead a ecc value on read
	* This can only work if we have the ecc bytes directly behind the		* This can only work if we have the ecc bytes directly behind the
	* data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */		* data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */

Documentation/cgroups/freezer-subsystem.txt

+2 −2

Original line number	Original line	Diff line number	Diff line
	@@ -33,9 +33,9 @@ demonstrate this problem using nested bash shells:

	From a second, unrelated bash shell:		From a second, unrelated bash shell:
	$ kill -SIGSTOP 16690		$ kill -SIGSTOP 16690
	$ kill -SIGCONT 16990		$ kill -SIGCONT 16690

	<at this point 16990 exits and causes 16644 to exit too>		<at this point 16690 exits and causes 16644 to exit too>

	This happens because bash can observe both signals and choose how it		This happens because bash can observe both signals and choose how it
	responds to them.		responds to them.