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Commit fccfe099 authored by Bartlomiej Zolnierkiewicz's avatar Bartlomiej Zolnierkiewicz Committed by Eduardo Valentin
Browse files

thermal: exynos: remove parsing of samsung,tmu_gain property 



Since pdata gain values are SoC (not platform) specific just move
it from platform data to struct exynos_tmu_data instance. Then
remove parsing of samsung,tmu_gain property.

There should be no functional changes caused by this patch.

Signed-off-by: default avatarBartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com>
Reviewed-by: default avatarDaniel Lezcano <daniel.lezcano@linaro.org>
Signed-off-by: default avatarEduardo Valentin <edubezval@gmail.com>
parent 61020d18

drivers/thermal/samsung/exynos_tmu.c

+9 −9
Original line number Diff line number Diff line
@@ -192,6 +192,8 @@ 
 * @max_efuse_value: maximum valid trimming data

 * @temp_error1: fused value of the first point trim.

 * @temp_error2: fused value of the second point trim.

 * @gain: gain of amplifier in the positive-TC generator block

 *	0 < gain <= 15

 * @reference_voltage: reference voltage of amplifier

 *	in the positive-TC generator block

 *	0 < reference_voltage <= 31
@@ -219,6 +221,7 @@ struct exynos_tmu_data { 
	u32 min_efuse_value;

	u32 max_efuse_value;

	u16 temp_error1, temp_error2;

	u8 gain;

	u8 reference_voltage;

	struct regulator *regulator;

	struct thermal_zone_device *tzd;
@@ -368,8 +371,6 @@ static int exynos_tmu_initialize(struct platform_device *pdev) 


static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)

{

	struct exynos_tmu_platform_data *pdata = data->pdata;



	if (data->soc == SOC_ARCH_EXYNOS4412 ||

	    data->soc == SOC_ARCH_EXYNOS3250)

		con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT);
@@ -378,7 +379,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 con) 
	con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;



	con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);

	con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);

	con |= (data->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);



	con &= ~(EXYNOS_TMU_TRIP_MODE_MASK << EXYNOS_TMU_TRIP_MODE_SHIFT);

	con |= (EXYNOS_NOISE_CANCEL_MODE << EXYNOS_TMU_TRIP_MODE_SHIFT);
@@ -1135,14 +1136,8 @@ MODULE_DEVICE_TABLE(of, exynos_tmu_match); 
static int exynos_of_sensor_conf(struct device_node *np,

				 struct exynos_tmu_platform_data *pdata)

{

	u32 value;

	int ret;



	of_node_get(np);



	ret = of_property_read_u32(np, "samsung,tmu_gain", &value);

	pdata->gain = (u8)value;



	of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);



	of_node_put(np);
@@ -1196,6 +1191,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_read = exynos4210_tmu_read;

		data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;

		data->ntrip = 4;

		data->gain = 15;

		data->reference_voltage = 7;

		data->efuse_value = 55;

		data->min_efuse_value = 40;
@@ -1213,6 +1209,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_set_emulation = exynos4412_tmu_set_emulation;

		data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;

		data->ntrip = 4;

		data->gain = 8;

		data->reference_voltage = 16;

		data->efuse_value = 55;

		if (data->soc != SOC_ARCH_EXYNOS5420 &&
@@ -1229,6 +1226,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_set_emulation = exynos4412_tmu_set_emulation;

		data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;

		data->ntrip = 8;

		data->gain = 8;

		if (res.start == EXYNOS5433_G3D_BASE)

			data->reference_voltage = 23;

		else
@@ -1244,6 +1242,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_set_emulation = exynos5440_tmu_set_emulation;

		data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;

		data->ntrip = 4;

		data->gain = 5;

		data->reference_voltage = 16;

		data->efuse_value = 0x5d2d;

		data->min_efuse_value = 16;
@@ -1256,6 +1255,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) 
		data->tmu_set_emulation = exynos4412_tmu_set_emulation;

		data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;

		data->ntrip = 8;

		data->gain = 9;

		data->reference_voltage = 17;

		data->efuse_value = 75;

		data->min_efuse_value = 15;

drivers/thermal/samsung/exynos_tmu.h

+0 −4
Original line number Diff line number Diff line
@@ -40,15 +40,11 @@ enum soc_type { 


/**

 * struct exynos_tmu_platform_data

 * @gain: gain of amplifier in the positive-TC generator block

 *	0 < gain <= 15

 * @cal_type: calibration type for temperature

 *

 * This structure is required for configuration of exynos_tmu driver.

 */

struct exynos_tmu_platform_data {

	u8 gain;



	u32 cal_type;

};