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Commit c7b28e25 authored by Brian Norris's avatar Brian Norris Committed by David Woodhouse
Browse files

mtd: nand: refactor BB marker detection 



Some level of support for various scanning locations was already built in,
but this required clean-up. First, BB marker location cannot be determined
_only_ by the page size. Instead, I implemented some heuristic detection
based on data sheets from various manufacturers (all found in
nand_base.c:nand_get_flash_type()).

Second, once these options were identified, they were not handled properly
by nand_bbt.c:nand_default_bbt(). I updated the static nand_bbt_desc structs
to reflect the need for more combinations of detection. The memory allocation
here probably needs to be done dynamically in the very near future (see next
patches).

Signed-off-by: default avatarBrian Norris <norris@broadcom.com>
Signed-off-by: default avatarArtem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: default avatarDavid Woodhouse <David.Woodhouse@intel.com>
parent 78d10224

drivers/mtd/nand/nand_base.c

+20 −4
Original line number Diff line number Diff line
@@ -2920,9 +2920,14 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd, 
		chip->chip_shift = ffs((unsigned)(chip->chipsize >> 32)) + 32 - 1;



	/* Set the bad block position */

	chip->badblockpos = mtd->writesize > 512 ?

		NAND_LARGE_BADBLOCK_POS : NAND_SMALL_BADBLOCK_POS;

	chip->badblockbits = 8;

	if (!(busw & NAND_BUSWIDTH_16) && (*maf_id == NAND_MFR_STMICRO ||

				(*maf_id == NAND_MFR_SAMSUNG &&

				 mtd->writesize == 512) ||

				*maf_id == NAND_MFR_AMD))

		chip->badblockpos = NAND_SMALL_BADBLOCK_POS;

	else

		chip->badblockpos = NAND_LARGE_BADBLOCK_POS;





	/* Get chip options, preserve non chip based options */

	chip->options &= ~NAND_CHIPOPTIONS_MSK;
@@ -2941,12 +2946,23 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd, 


	/*

	 * Bad block marker is stored in the last page of each block

	 * on Samsung and Hynix MLC devices

	 * on Samsung and Hynix MLC devices; stored in first two pages

	 * of each block on Micron devices with 2KiB pages and on

	 * SLC Samsung, Hynix, and AMD/Spansion. All others scan only

	 * the first page.

	 */

	if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&

			(*maf_id == NAND_MFR_SAMSUNG ||

			 *maf_id == NAND_MFR_HYNIX))

		chip->options |= NAND_BBT_SCANLASTPAGE;

	else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&

				(*maf_id == NAND_MFR_SAMSUNG ||

				 *maf_id == NAND_MFR_HYNIX ||

				 *maf_id == NAND_MFR_AMD)) ||

			(mtd->writesize == 2048 &&

			 *maf_id == NAND_MFR_MICRON))

		chip->options |= NAND_BBT_SCAN2NDPAGE;





	/* Check for AND chips with 4 page planes */

	if (chip->options & NAND_4PAGE_ARRAY)

drivers/mtd/nand/nand_bbt.c

+38 −7
Original line number Diff line number Diff line
@@ -1093,29 +1093,50 @@ int nand_update_bbt(struct mtd_info *mtd, loff_t offs) 
static uint8_t scan_ff_pattern[] = { 0xff, 0xff };



static struct nand_bbt_descr smallpage_memorybased = {

	.options = NAND_BBT_SCAN2NDPAGE,

	.offs = 5,

	.options = 0,

	.offs = NAND_SMALL_BADBLOCK_POS,

	.len = 1,

	.pattern = scan_ff_pattern

};



static struct nand_bbt_descr smallpage_scan2nd_memorybased = {

	.options = NAND_BBT_SCAN2NDPAGE,

	.offs = NAND_SMALL_BADBLOCK_POS,

	.len = 2,

	.pattern = scan_ff_pattern

};



static struct nand_bbt_descr largepage_memorybased = {

	.options = 0,

	.offs = 0,

	.offs = NAND_LARGE_BADBLOCK_POS,

	.len = 1,

	.pattern = scan_ff_pattern

};



static struct nand_bbt_descr largepage_scan2nd_memorybased = {

	.options = NAND_BBT_SCAN2NDPAGE,

	.offs = NAND_LARGE_BADBLOCK_POS,

	.len = 2,

	.pattern = scan_ff_pattern

};



static struct nand_bbt_descr lastpage_memorybased = {

	.options = NAND_BBT_SCANLASTPAGE,

	.offs = 0,

	.len = 1,

	.pattern = scan_ff_pattern

};



static struct nand_bbt_descr smallpage_flashbased = {

	.options = NAND_BBT_SCAN2NDPAGE,

	.offs = 5,

	.offs = NAND_SMALL_BADBLOCK_POS,

	.len = 1,

	.pattern = scan_ff_pattern

};



static struct nand_bbt_descr largepage_flashbased = {

	.options = NAND_BBT_SCAN2NDPAGE,

	.offs = 0,

	.offs = NAND_LARGE_BADBLOCK_POS,

	.len = 2,

	.pattern = scan_ff_pattern

};
@@ -1197,8 +1218,18 @@ int nand_default_bbt(struct mtd_info *mtd) 
		this->bbt_td = NULL;

		this->bbt_md = NULL;

		if (!this->badblock_pattern) {

			this->badblock_pattern = (mtd->writesize > 512) ?

			    &largepage_memorybased : &smallpage_memorybased;

			if (this->options & NAND_BBT_SCANLASTPAGE)

				this->badblock_pattern = &lastpage_memorybased;

			else if (this->options & NAND_BBT_SCAN2NDPAGE)

				this->badblock_pattern = this->badblockpos ==

					NAND_SMALL_BADBLOCK_POS ?

					&smallpage_scan2nd_memorybased :

					&largepage_scan2nd_memorybased;

			else

				this->badblock_pattern = this->badblockpos ==

					NAND_SMALL_BADBLOCK_POS ?

					&smallpage_memorybased :

					&largepage_memorybased;

		}

	}

	return nand_scan_bbt(mtd, this->badblock_pattern);