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Commit a8cd4561 authored by Anand Gadiyar's avatar Anand Gadiyar Committed by Jiri Kosina
Browse files

fix "seperate" typos in comments



s/seperate/separate

Signed-off-by: default avatarAnand Gadiyar <gadiyar@ti.com>
Signed-off-by: default avatarJiri Kosina <jkosina@suse.cz>
parent 7d7fb0e6
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+4 −4
Original line number Diff line number Diff line
@@ -59,7 +59,7 @@ Levels
------

Garbage collection (GC) may fail if all data is written
indiscriminately.  One requirement of GC is that data is seperated
indiscriminately.  One requirement of GC is that data is separated
roughly according to the distance between the tree root and the data.
Effectively that means all file data is on level 0, indirect blocks
are on levels 1, 2, 3 4 or 5 for 1x, 2x, 3x, 4x or 5x indirect blocks,
@@ -67,7 +67,7 @@ respectively. Inode file data is on level 6 for the inodes and 7-11
for indirect blocks.

Each segment contains objects of a single level only.  As a result,
each level requires its own seperate segment to be open for writing.
each level requires its own separate segment to be open for writing.

Inode File
----------
@@ -106,9 +106,9 @@ Vim
---

By cleverly predicting the life time of data, it is possible to
seperate long-living data from short-living data and thereby reduce
separate long-living data from short-living data and thereby reduce
the GC overhead later.  Each type of distinc life expectency (vim) can
have a seperate segment open for writing.  Each (level, vim) tupel can
have a separate segment open for writing.  Each (level, vim) tupel can
be open just once.  If an open segment with unknown vim is encountered
at mount time, it is closed and ignored henceforth.

+1 −1
Original line number Diff line number Diff line
@@ -391,7 +391,7 @@ static struct clk clk_hsmmc = {

/* i2s_eplldiv
 *
 * This clock is the output from the I2S divisor of ESYSCLK, and is seperate
 * This clock is the output from the I2S divisor of ESYSCLK, and is separate
 * from the mux that comes after it (cannot merge into one single clock)
*/

+1 −1
Original line number Diff line number Diff line
@@ -97,7 +97,7 @@ extern void s3c_gpiolib_add(struct s3c_gpio_chip *chip);
 * others = Special functions (dependant on bank)
 *
 * Note, since the code to deal with the case where there are two control
 * registers instead of one, we do not have a seperate set of function
 * registers instead of one, we do not have a separate set of function
 * (samsung_gpiolib_add_4bit2_chips)for each case.
 */
extern void samsung_gpiolib_add_4bit_chips(struct s3c_gpio_chip *chip,
+1 −1
Original line number Diff line number Diff line
@@ -181,7 +181,7 @@ struct ehci_hcd_omap {
	void __iomem		*ehci_base;

	/* Regulators for USB PHYs.
	 * Each PHY can have a seperate regulator.
	 * Each PHY can have a separate regulator.
	 */
	struct regulator        *regulator[OMAP3_HS_USB_PORTS];
};
+1 −1
Original line number Diff line number Diff line
@@ -12,7 +12,7 @@
 * Atomic dir operations
 *
 * Directory operations are by default not atomic.  Dentries and Inodes are
 * created/removed/altered in seperate operations.  Therefore we need to do
 * created/removed/altered in separate operations.  Therefore we need to do
 * a small amount of journaling.
 *
 * Create, link, mkdir, mknod and symlink all share the same function to do
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