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Commit 8c342335 authored by Brian Norris's avatar Brian Norris Committed by David Woodhouse
Browse files

mtd: nand: scan 1st and 2nd page for Macronix SLC

parent c01804ed
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+4 −3
Original line number Diff line number Diff line
@@ -3132,8 +3132,8 @@ ident_done:
	 * Bad block marker is stored in the last page of each block
	 * on Samsung and Hynix MLC devices; stored in first two pages
	 * of each block on Micron devices with 2KiB pages and on
	 * SLC Samsung, Hynix, Toshiba and AMD/Spansion. All others scan
	 * only the first page.
	 * SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix.
	 * All others scan only the first page.
	 */
	if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
			(*maf_id == NAND_MFR_SAMSUNG ||
@@ -3143,7 +3143,8 @@ ident_done:
				(*maf_id == NAND_MFR_SAMSUNG ||
				 *maf_id == NAND_MFR_HYNIX ||
				 *maf_id == NAND_MFR_TOSHIBA ||
				 *maf_id == NAND_MFR_AMD)) ||
				 *maf_id == NAND_MFR_AMD ||
				 *maf_id == NAND_MFR_MACRONIX)) ||
			(mtd->writesize == 2048 &&
			 *maf_id == NAND_MFR_MICRON))
		chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;