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Commit 71ec8232 authored by Xiaozhe Shi's avatar Xiaozhe Shi Committed by Gerrit - the friendly Code Review server
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power: qpnp-fg: qualify capacity learning start conditions 



Add an additional check to the capacity learning algorithm's start
conditions to make sure that the battery is reasonably well settled
before starting. Specifically, check that the difference between
vbat_shadow and the v_current_predicted is not greater than a specified
threshold before starting the algorithm.

CRs-Fixed: 827068
Change-Id: Ief96061c69d26c8ebbf4cf374c3e0f7ef5933017
Signed-off-by: default avatarXiaozhe Shi <xiaozhes@codeaurora.org>
parent 23ed8497

Documentation/devicetree/bindings/power/qpnp-fg.txt

+4 −0
Original line number Diff line number Diff line
@@ -134,6 +134,10 @@ Parent node optional properties: 
- qcom,cl-max-start-soc:		The battery soc has to be below this

					value at the start of a charge cycle

					for capacity learning to be run.

- qcom,cl-vbat-est-thr-uv:		The maximum difference between the

					battery voltage shadow and the current

					predicted voltage in uV to initiate

					capacity learning.

- qcom,capacity-estimation-on:		A boolean property to have the fuel

					gauge driver attempt to estimate the

					battery capacity using battery

drivers/power/qpnp-fg.c

+23 −5
Original line number Diff line number Diff line
@@ -124,6 +124,7 @@ struct fg_learning_data { 
	int			max_decrement;

	int			min_temp;

	int			max_temp;

	int			vbat_est_thr_uv;

};



struct fg_rslow_data {
@@ -2779,6 +2780,12 @@ static void fg_cap_learning_post_process(struct fg_chip *chip) 
				old_cap, chip->learning_data.learned_cc_uah);

}



static int get_vbat_est_diff(struct fg_chip *chip)

{

	return abs(fg_data[FG_DATA_VOLTAGE].value

				- fg_data[FG_DATA_CPRED_VOLTAGE].value);

}



#define CBITS_INPUT_FILTER_REG		0x4B4

#define IBATTF_TAU_MASK			0x38

#define IBATTF_TAU_99_S			0x30
@@ -2786,6 +2793,7 @@ static int fg_cap_learning_check(struct fg_chip *chip) 
{

	u8 data[3];

	int rc = 0, battery_soc;

	int vbat_est_diff;



	mutex_lock(&chip->learning_data.learning_lock);

	if (chip->status == POWER_SUPPLY_STATUS_CHARGING
@@ -2801,6 +2809,17 @@ static int fg_cap_learning_check(struct fg_chip *chip) 
			goto fail;



		fg_mem_lock(chip);

		vbat_est_diff = get_vbat_est_diff(chip);

		if (vbat_est_diff >= chip->learning_data.vbat_est_thr_uv &&

				chip->learning_data.vbat_est_thr_uv > 0) {

			if (fg_debug_mask & FG_AGING)

				pr_info("vbat_est_diff (%d) < threshold (%d)\n",

					vbat_est_diff,

					chip->learning_data.vbat_est_thr_uv);

			fg_mem_release(chip);

			fg_cap_learning_stop(chip);

			goto fail;

		}

		battery_soc = get_battery_soc_raw(chip);

		if (fg_debug_mask & FG_AGING)

			pr_info("checking battery soc (%d vs %d)\n",
@@ -3754,8 +3773,6 @@ fail: 
	return -EINVAL;

}



#define V_PREDICTED_ADDR		0x540

#define V_CURRENT_PREDICTED_OFFSET	0

#define PROFILE_LOAD_TIMEOUT_MS		5000

#define FG_PROFILE_LEN			128

#define PROFILE_COMPARE_LEN		32
@@ -3891,8 +3908,7 @@ wait: 
		goto no_profile;

	}



	vbat_in_range = abs(fg_data[FG_DATA_VOLTAGE].value

				- fg_data[FG_DATA_CPRED_VOLTAGE].value)

	vbat_in_range = get_vbat_est_diff(chip)

			< settings[FG_MEM_VBAT_EST_DIFF].value * 1000;

	profiles_same = memcmp(chip->batt_profile, data,

					PROFILE_COMPARE_LEN) == 0;
@@ -4167,6 +4183,8 @@ static int fg_of_init(struct fg_chip *chip) 
			"cl-min-temp-decidegc", rc, 150);

	OF_READ_PROPERTY(chip->learning_data.max_start_soc,

			"cl-max-start-capacity", rc, 15);

	OF_READ_PROPERTY(chip->learning_data.vbat_est_thr_uv,

			"cl-vbat-est-thr-uv", rc, 40000);

	OF_READ_PROPERTY(chip->evaluation_current,

			"aging-eval-current-ma", rc,

			DEFAULT_EVALUATION_CURRENT_MA);