Commit 5a40b5fb authored Dec 24, 2012 by Rafał Miłecki Committed by David Woodhouse Dec 24, 2012

mtd: bcm47xxnflash: increase NFLASH_READY_RETRIES

Recently imlemented writing support has shown that current num of
retries is too low. Writing requires longer waiting than simple reading.

Signed-off-by: Rafał Miłecki <zajec5@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>

parent ca2a88f5

drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c

+2 −2

Original line number	Diff line number	Diff line
		@@ -17,8 +17,8 @@
		#include "bcm47xxnflash.h"

		/* Broadcom uses 1'000'000 but it seems to be too many. Tests on WNDR4500 has
		* shown 164 retries as maxiumum. */
		#define NFLASH_READY_RETRIES 1000
		* shown ~1000 retries as maxiumum. */
		#define NFLASH_READY_RETRIES 10000

		#define NFLASH_SECTOR_SIZE 512