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Commit cbf73175 authored by Ben Dooks's avatar Ben Dooks Committed by Krzysztof Kozlowski
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memory: samsung: endian fixes for IO 



Use the relaxed versions of the IO accessors to avoid any issues
if running in big endian.

Signed-off-by: default avatarBen Dooks <ben.dooks@codethink.co.uk>
Signed-off-by: default avatarKrzysztof Kozlowski <k.kozlowski@samsung.com>
parent 9479f7cc

drivers/memory/samsung/exynos-srom.c

+10 −10
Original line number Diff line number Diff line
@@ -91,11 +91,11 @@ static int exynos_srom_configure_bank(struct exynos_srom *srom, 
	if (width == 2)

		cs |= 1 << EXYNOS_SROM_BW__DATAWIDTH__SHIFT;



	bw = __raw_readl(srom->reg_base + EXYNOS_SROM_BW);

	bw = readl_relaxed(srom->reg_base + EXYNOS_SROM_BW);

	bw = (bw & ~(EXYNOS_SROM_BW__CS_MASK << bank)) | (cs << bank);

	__raw_writel(bw, srom->reg_base + EXYNOS_SROM_BW);

	writel_relaxed(bw, srom->reg_base + EXYNOS_SROM_BW);



	__raw_writel(pmc | (timing[0] << EXYNOS_SROM_BCX__TACP__SHIFT) |

	writel_relaxed(pmc | (timing[0] << EXYNOS_SROM_BCX__TACP__SHIFT) |

		       (timing[1] << EXYNOS_SROM_BCX__TCAH__SHIFT) |

		       (timing[2] << EXYNOS_SROM_BCX__TCOH__SHIFT) |

		       (timing[3] << EXYNOS_SROM_BCX__TACC__SHIFT) |