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Commit f212f4a9 authored by Subbaraman Narayanamurthy's avatar Subbaraman Narayanamurthy
Browse files

power: qpnp-fg: add support for configuring the CC_CV setpoint 



When the float voltage adjustment algorithm is active, the CC_CV
(Constant Charge to Constant Voltage) setpoint needs to be set
closer to the float voltage. Add support for configuring it.

CRs-Fixed: 793257
Change-Id: I027ad3127d8ce56d132a9d7dfe5b7057b73f0650
Signed-off-by: default avatarSubbaraman Narayanamurthy <subbaram@codeaurora.org>
parent 6addb24b

Documentation/devicetree/bindings/power/qpnp-fg.txt

+11 −0
Original line number Diff line number Diff line
@@ -139,6 +139,17 @@ Parent node optional properties: 
					This value should be around the steady

					state current drawn from the battery

					when the phone is low on battery.

- qcom,fg-cc-cv-threshold-mv:		Voltage threshold in mV for configuring

					constant charge (CC) to constant

					voltage (CV) setpoint in FG upon

					which the battery EOC status will

					be determined. This value should be

					10 mV less than the float voltage

					configured in the charger.

					This property should only be specified

					if "qcom,autoadjust-vfloat" property is

					specified in the charger driver to

					ensure a proper operation.



qcom,fg-soc node required properties:

- reg : offset and length of the PMIC peripheral register map.

drivers/power/qpnp-fg.c

+38 −2
Original line number Diff line number Diff line
@@ -341,6 +341,7 @@ struct fg_chip { 
	u16			cycle_counter;

	u32			cyc_ctr_low_soc;

	u32			cyc_ctr_hi_soc;

	u32			cc_cv_threshold_mv;

	unsigned int		batt_profile_len;

	unsigned int		batt_max_voltage_uv;

	const char		*batt_type;
@@ -949,7 +950,17 @@ static int soc_to_setpoint(int soc) 
	return DIV_ROUND_CLOSEST(soc * 255, 100);

}



static u8 batt_to_setpoint(int vbatt_mv)

static void batt_to_setpoint_adc(int vbatt_mv, u8 *data)

{

	int val;

	/* Battery voltage is an offset from 0 V and LSB is 1/2^15. */

	val = DIV_ROUND_CLOSEST(vbatt_mv * 32768, 5000);

	data[0] = val & 0xFF;

	data[1] = val >> 8;

	return;

}



static u8 batt_to_setpoint_8b(int vbatt_mv)

{

	int val;

	/* Battery voltage is an offset from 2.5 V and LSB is 5/2^9. */
@@ -2644,6 +2655,27 @@ static int update_chg_iterm(struct fg_chip *chip) 
			2, settings[FG_MEM_CHG_TERM_CURRENT].offset, 0);

}



#define CC_CV_SETPOINT_REG	0x4F8

#define CC_CV_SETPOINT_OFFSET	0

static void update_cc_cv_setpoint(struct fg_chip *chip)

{

	int rc;

	u8 tmp[2];



	if (!chip->cc_cv_threshold_mv)

		return;

	batt_to_setpoint_adc(chip->cc_cv_threshold_mv, tmp);

	rc = fg_mem_write(chip, tmp, CC_CV_SETPOINT_REG, 2,

				CC_CV_SETPOINT_OFFSET, 0);

	if (rc) {

		pr_err("failed to write CC_CV_VOLT rc=%d\n", rc);

		return;

	}

	if (fg_debug_mask & FG_STATUS)

		pr_info("Wrote %x %x to address %x for CC_CV setpoint\n",

			tmp[0], tmp[1], CC_CV_SETPOINT_REG);

}



#define V_PREDICTED_ADDR		0x540

#define V_CURRENT_PREDICTED_OFFSET	0

#define LOW_LATENCY	BIT(6)
@@ -2915,6 +2947,7 @@ done: 
	chip->profile_loaded = true;

	chip->battery_missing = is_battery_missing(chip);

	update_chg_iterm(chip);

	update_cc_cv_setpoint(chip);

	rc = populate_learning_data(chip);

	if (rc) {

		pr_err("failed to read ocv properties=%d\n", rc);
@@ -3123,6 +3156,8 @@ static int fg_of_init(struct fg_chip *chip) 
	OF_READ_PROPERTY(chip->evaluation_current,

			"aging-eval-current-ma", rc,

			DEFAULT_EVALUATION_CURRENT_MA);

	OF_READ_PROPERTY(chip->cc_cv_threshold_mv,

			"fg-cc-cv-threshold-mv", rc, 0);

	if (of_property_read_bool(chip->spmi->dev.of_node,

				"qcom,capacity-learning-on"))

		chip->batt_aging_mode = FG_AGING_CC;
@@ -3180,6 +3215,7 @@ static int fg_of_init(struct fg_chip *chip) 
		chip->cyc_ctr_hi_soc = soc_to_setpoint(chip->cyc_ctr_hi_soc);

		chip->cycle_counter = 0;

	}



	return rc;

}
@@ -3915,7 +3951,7 @@ static int fg_hw_init(struct fg_chip *chip) 
	}



	rc = fg_mem_masked_write(chip, settings[FG_MEM_BATT_LOW].address, 0xFF,

			batt_to_setpoint(settings[FG_MEM_BATT_LOW].value),

			batt_to_setpoint_8b(settings[FG_MEM_BATT_LOW].value),

			settings[FG_MEM_BATT_LOW].offset);

	if (rc) {

		pr_err("failed to write Vbatt_low rc=%d\n", rc);