Merge "power: qpnp-fg: Add support to configure BCL mode switch thresholds" (c96a265d) · Commits · e / devices / android_kernel_sony_msm8994

Documentation/devicetree/bindings/power/qpnp-fg.txt

+4 −0

Original line number	Diff line number	Diff line
		@@ -40,6 +40,10 @@ Parent node optional properties:
		be exactly 6 bytes in length.
		Example: [01 02 03 04 05 06]
		- qcom,resume-soc: soc to resume charging in percentage.
		- qcom,bcl-lm-threshold-ma: BCL LPM to MPM mode transition threshold
		in milliAmpere.
		- qcom,bcl-mh-threshold-ma: BCL MPM to HPM mode transition threshold
		in milliAmpere.
		- qcom,use-otp-profile: Specify this flag to avoid RAM loading
		any battery profile.
		- qcom,sw-rbias-control: Boolean property which defines whether

drivers/power/qpnp-fg.c

+41 −0

Original line number	Diff line number	Diff line
		@@ -81,6 +81,10 @@
		#define QPNP_FG_DEV_NAME "qcom,qpnp-fg"
		#define MEM_IF_TIMEOUT_MS 5000

		#define BCL_MA_TO_ADC(_current, _adc_val) { \
		_adc_val = (u8)((_current) * 100 / 976); \
		}

		/* Debug Flag Definitions */
		enum {
		FG_SPMI_DEBUG_WRITES = BIT(0), /* Show SPMI writes */
		@@ -112,6 +116,8 @@ enum fg_mem_setting_index {
		FG_MEM_HARD_COLD,
		FG_MEM_HARD_HOT,
		FG_MEM_RESUME_SOC,
		FG_MEM_BCL_LM_THRESHOLD,
		FG_MEM_BCL_MH_THRESHOLD,
		FG_MEM_SETTING_MAX,
		};

		@@ -141,6 +147,8 @@ static struct fg_mem_setting settings[FG_MEM_SETTING_MAX] = {
		SETTING(HARD_COLD, 0x454, 2, 50),
		SETTING(HARD_HOT, 0x454, 3, 450),
		SETTING(RESUME_SOC, 0x45C, 1, 0),
		SETTING(BCL_LM_THRESHOLD, 0x47C, 2, 50),
		SETTING(BCL_MH_THRESHOLD, 0x47C, 3, 752),
		};

		#define DATA(_idx, _address, _offset, _length, _value) \
		@@ -1707,6 +1715,34 @@ static void batt_profile_init(struct work_struct *work)
		pr_err("failed to initialize profile\n");
		}

		static void update_bcl_thresholds(struct fg_chip *chip)
		{
		u8 data[4];
		u8 mh_offset = 0, lm_offset = 0;
		u16 address = 0;
		int ret = 0;

		address = settings[FG_MEM_BCL_MH_THRESHOLD].address;
		mh_offset = settings[FG_MEM_BCL_MH_THRESHOLD].offset;
		lm_offset = settings[FG_MEM_BCL_LM_THRESHOLD].offset;
		ret = fg_mem_read(chip, data, address, 4, 0, 1);
		if (ret)
		pr_err("Error reading BCL LM & MH threshold rc:%d\n", ret);
		else
		pr_debug("Old BCL LM threshold:%x MH threshold:%x\n",
		data[lm_offset], data[mh_offset]);
		BCL_MA_TO_ADC(settings[FG_MEM_BCL_MH_THRESHOLD].value, data[mh_offset]);
		BCL_MA_TO_ADC(settings[FG_MEM_BCL_LM_THRESHOLD].value, data[lm_offset]);

		ret = fg_mem_write(chip, data, address, 4, 0, 0);
		if (ret)
		pr_err("spmi write failed. addr:%03x, ret:%d\n",
		address, ret);
		else
		pr_debug("New BCL LM threshold:%x MH threshold:%x\n",
		data[lm_offset], data[mh_offset]);
		}

		static int fg_of_init(struct fg_chip *chip)
		{
		int rc = 0, sense_type, len = 0;
		@@ -1716,6 +1752,10 @@ static int fg_of_init(struct fg_chip *chip)
		OF_READ_SETTING(FG_MEM_SOFT_COLD, "cool-bat-decidegc", rc, 1);
		OF_READ_SETTING(FG_MEM_HARD_HOT, "hot-bat-decidegc", rc, 1);
		OF_READ_SETTING(FG_MEM_HARD_COLD, "cold-bat-decidegc", rc, 1);
		OF_READ_SETTING(FG_MEM_BCL_LM_THRESHOLD, "bcl-lm-threshold-ma",
		rc, 1);
		OF_READ_SETTING(FG_MEM_BCL_MH_THRESHOLD, "bcl-mh-threshold-ma",
		rc, 1);
		data = of_get_property(chip->spmi->dev.of_node,
		"qcom,thermal-coefficients", &len);
		if (data && len == THERMAL_COEFF_N_BYTES) {
		@@ -2340,6 +2380,7 @@ static int fg_hw_init(struct fg_chip *chip)
		u8 resume_soc;
		int rc = 0;

		update_bcl_thresholds(chip);
		rc = fg_set_auto_recharge(chip);
		if (rc) {
		pr_err("Couldn't set auto recharge in FG\n");