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Commit 26cdb67c authored by David Woodhouse's avatar David Woodhouse
Browse files

[MTD] Remove more strange u_intxx_t types

parent 3854be77
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+1 −1
Original line number Diff line number Diff line
@@ -696,7 +696,7 @@ struct mtd_info *mtd_concat_create(struct mtd_info *subdev[], /* subdevices to c
	int i;
	size_t size;
	struct mtd_concat *concat;
	u_int32_t max_erasesize, curr_erasesize;
	uint32_t max_erasesize, curr_erasesize;
	int num_erase_region;

	printk(KERN_NOTICE "Concatenating MTD devices:\n");
+13 −13
Original line number Diff line number Diff line
@@ -39,8 +39,8 @@ struct erase_info {
	uint64_t fail_addr;
	u_long time;
	u_long retries;
	u_int dev;
	u_int cell;
	unsigned dev;
	unsigned cell;
	void (*callback) (struct erase_info *self);
	u_long priv;
	u_char state;
@@ -49,8 +49,8 @@ struct erase_info {

struct mtd_erase_region_info {
	uint64_t offset;			/* At which this region starts, from the beginning of the MTD */
	u_int32_t erasesize;		/* For this region */
	u_int32_t numblocks;		/* Number of blocks of erasesize in this region */
	uint32_t erasesize;		/* For this region */
	uint32_t numblocks;		/* Number of blocks of erasesize in this region */
	unsigned long *lockmap;		/* If keeping bitmap of locks */
};

@@ -102,14 +102,14 @@ struct mtd_oob_ops {

struct mtd_info {
	u_char type;
	u_int32_t flags;
	uint32_t flags;
	uint64_t size;	 // Total size of the MTD

	/* "Major" erase size for the device. Naïve users may take this
	 * to be the only erase size available, or may use the more detailed
	 * information below if they desire
	 */
	u_int32_t erasesize;
	uint32_t erasesize;
	/* Minimal writable flash unit size. In case of NOR flash it is 1 (even
	 * though individual bits can be cleared), in case of NAND flash it is
	 * one NAND page (or half, or one-fourths of it), in case of ECC-ed NOR
@@ -117,10 +117,10 @@ struct mtd_info {
	 * Any driver registering a struct mtd_info must ensure a writesize of
	 * 1 or larger.
	 */
	u_int32_t writesize;
	uint32_t writesize;

	u_int32_t oobsize;   // Amount of OOB data per block (e.g. 16)
	u_int32_t oobavail;  // Available OOB bytes per block
	uint32_t oobsize;   // Amount of OOB data per block (e.g. 16)
	uint32_t oobavail;  // Available OOB bytes per block

	/*
	 * If erasesize is a power of 2 then the shift is stored in
@@ -233,7 +233,7 @@ struct mtd_info {
	void (*put_device) (struct mtd_info *mtd);
};

static inline u_int32_t mtd_div_by_eb(uint64_t sz, struct mtd_info *mtd)
static inline uint32_t mtd_div_by_eb(uint64_t sz, struct mtd_info *mtd)
{
	if (mtd->erasesize_shift)
		return sz >> mtd->erasesize_shift;
@@ -241,14 +241,14 @@ static inline u_int32_t mtd_div_by_eb(uint64_t sz, struct mtd_info *mtd)
	return sz;
}

static inline u_int32_t mtd_mod_by_eb(uint64_t sz, struct mtd_info *mtd)
static inline uint32_t mtd_mod_by_eb(uint64_t sz, struct mtd_info *mtd)
{
	if (mtd->erasesize_shift)
		return sz & mtd->erasesize_mask;
	return do_div(sz, mtd->erasesize);
}

static inline u_int32_t mtd_div_by_ws(uint64_t sz, struct mtd_info *mtd)
static inline uint32_t mtd_div_by_ws(uint64_t sz, struct mtd_info *mtd)
{
	if (mtd->writesize_shift)
		return sz >> mtd->writesize_shift;
@@ -256,7 +256,7 @@ static inline u_int32_t mtd_div_by_ws(uint64_t sz, struct mtd_info *mtd)
	return sz;
}

static inline u_int32_t mtd_mod_by_ws(uint64_t sz, struct mtd_info *mtd)
static inline uint32_t mtd_mod_by_ws(uint64_t sz, struct mtd_info *mtd)
{
	if (mtd->writesize_shift)
		return sz & mtd->writesize_mask;
+1 −1
Original line number Diff line number Diff line
@@ -38,7 +38,7 @@ struct mtd_partition {
	char *name;			/* identifier string */
	uint64_t size;			/* partition size */
	uint64_t offset;		/* offset within the master MTD space */
	u_int32_t mask_flags;		/* master MTD flags to mask out for this partition */
	uint32_t mask_flags;		/* master MTD flags to mask out for this partition */
	struct nand_ecclayout *ecclayout;	/* out of band layout for this partition (NAND only)*/
	struct mtd_info **mtdp;		/* pointer to store the MTD object */
};