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Commit 7beb37e5 authored by Boris Brezillon's avatar Boris Brezillon Committed by Miquel Raynal
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mtd: rawnand: Use nanddev_mtd_max_bad_blocks()



nanddev_mtd_max_bad_blocks() is implemented by the generic NAND layer
and is already doing what we need. Reuse this function instead of
having our own implementation.

While at it, get rid of the ->max_bb_per_die and ->blocks_per_die
fields which are now unused.

Signed-off-by: default avatarBoris Brezillon <bbrezillon@kernel.org>
Signed-off-by: default avatarMiquel Raynal <miquel.raynal@bootlin.com>
Reviewed-by: default avatarFrieder Schrempf <frieder.schrempf@kontron.de>
parent d974541e
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+1 −37
Original line number Diff line number Diff line
@@ -4297,42 +4297,6 @@ static int nand_block_markbad(struct mtd_info *mtd, loff_t ofs)
	return nand_block_markbad_lowlevel(mtd_to_nand(mtd), ofs);
}

/**
 * nand_max_bad_blocks - [MTD Interface] Max number of bad blocks for an mtd
 * @mtd: MTD device structure
 * @ofs: offset relative to mtd start
 * @len: length of mtd
 */
static int nand_max_bad_blocks(struct mtd_info *mtd, loff_t ofs, size_t len)
{
	struct nand_chip *chip = mtd_to_nand(mtd);
	u32 part_start_block;
	u32 part_end_block;
	u32 part_start_die;
	u32 part_end_die;

	/*
	 * max_bb_per_die and blocks_per_die used to determine
	 * the maximum bad block count.
	 */
	if (!chip->max_bb_per_die || !chip->blocks_per_die)
		return -ENOTSUPP;

	/* Get the start and end of the partition in erase blocks. */
	part_start_block = mtd_div_by_eb(ofs, mtd);
	part_end_block = mtd_div_by_eb(len, mtd) + part_start_block - 1;

	/* Get the start and end LUNs of the partition. */
	part_start_die = part_start_block / chip->blocks_per_die;
	part_end_die = part_end_block / chip->blocks_per_die;

	/*
	 * Look up the bad blocks per unit and multiply by the number of units
	 * that the partition spans.
	 */
	return chip->max_bb_per_die * (part_end_die - part_start_die + 1);
}

/**
 * nand_suspend - [MTD Interface] Suspend the NAND flash
 * @mtd: MTD device structure
@@ -5819,7 +5783,7 @@ static int nand_scan_tail(struct nand_chip *chip)
	mtd->_block_isreserved = nand_block_isreserved;
	mtd->_block_isbad = nand_block_isbad;
	mtd->_block_markbad = nand_block_markbad;
	mtd->_max_bad_blocks = nand_max_bad_blocks;
	mtd->_max_bad_blocks = nanddev_mtd_max_bad_blocks;

	/*
	 * Initialize bitflip_threshold to its default prior scan_bbt() call.
+0 −3
Original line number Diff line number Diff line
@@ -251,9 +251,6 @@ int nand_onfi_detect(struct nand_chip *chip)
	memorg->bits_per_cell = p->bits_per_cell;
	chip->bits_per_cell = p->bits_per_cell;

	chip->max_bb_per_die = le16_to_cpu(p->bb_per_lun);
	chip->blocks_per_die = le32_to_cpu(p->blocks_per_lun);

	if (le16_to_cpu(p->features) & ONFI_FEATURE_16_BIT_BUS)
		chip->options |= NAND_BUSWIDTH_16;

+0 −5
Original line number Diff line number Diff line
@@ -1015,9 +1015,6 @@ struct nand_legacy {
 * @id:			[INTERN] holds NAND ID
 * @parameters:		[INTERN] holds generic parameters under an easily
 *			readable form.
 * @max_bb_per_die:	[INTERN] the max number of bad blocks each die of a
 *			this nand device will encounter their life times.
 * @blocks_per_die:	[INTERN] The number of PEBs in a die
 * @data_interface:	[INTERN] NAND interface timing information
 * @cur_cs:		currently selected target. -1 means no target selected,
 *			otherwise we should always have cur_cs >= 0 &&
@@ -1076,8 +1073,6 @@ struct nand_chip {

	struct nand_id id;
	struct nand_parameters parameters;
	u16 max_bb_per_die;
	u32 blocks_per_die;

	struct nand_data_interface data_interface;